مؤتمر
Reducing Line Edge Roughness in Si and SiN Through Plasma Etch Chemistry Optimization for Photonic Waveguide Applications
| العنوان: | Reducing Line Edge Roughness in Si and SiN Through Plasma Etch Chemistry Optimization for Photonic Waveguide Applications |
|---|---|
| المساهمون: | Engelmann, Sebastian [IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center] |
| المصدر: | Conference: Paper 10149-15, SPIE Advanced Lithography, San Jose, CA (United States), Feb 2017 |
| وصف الملف: | Medium: ED; Size: 10 p. |
| الوصول الحر: | http://www.osti.gov/scitech/servlets/purl/1348079Test |
| قاعدة البيانات: | SciTech Connect |
| الوصف غير متاح. |