Plasma cleaning is a promising technology in surface treatments, despite technological interest its use is limited because its mechanisms still are not entirely understood. This work aims to evaluate how the applied power of an inductively coupled RF discharge at 13,56 MHz, with Ar and Ar+10%O2 atmospheres, affects its capabilities to etch an organic molecule. Mass variation rate was used as direct characterization of degradation process and attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR) was performed to search for residual molecular modifications. Additionally, optical emission spectroscopy (OES) measurements were performed to monitor the offer of active species in the gaseous volume. In experimental conditions was possible attain mass reduction from sample, with higher mass loss rate when applied power is increased. Material characterization shows the possibility of attain a high etch rate, while no structural modifications were detected, if the temperature is controlled.
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