Patent
Adaptive duo-gate MOSFET
| العنوان: | Adaptive duo-gate MOSFET |
|---|---|
| Patent Number: | 9,602,099 |
| تاريخ النشر: | March 21, 2017 |
| Appl. No: | 14/850982 |
| Application Filed: | September 11, 2015 |
| مستخلص: | An adaptive duo-gate MOSFET includes a trench MOSFET and an adaptive element. The trench MOSFET includes a source, a drain, a first gate, a second gate, and a dielectric layer between the first and second gates. Herein, the first gate may generate charge-coupling in blocking operation, and the second gate may form channel in the trench MOSFET when in conduction operation. The adaptive element is electrically coupled to the first gate, the second gate, and the source respectively. When a potential difference between the second gate and the source is larger than a predetermined value, the first gate and the source are electrically disconnected and then the first gate and the second gate are electrically connected. After a predetermined time, the first gate and the second gate are electrically disconnected and then the first gate and the source are electrically connected. |
| Inventors: | Su, Jiong-Guang (Hsinchu County, TW); Chou, Hung-Wen (Hsinchu County, TW) |
| Claim: | 1. An adaptive duo-gate MOSFET, comprising: a trench MOSFET, comprising a substrate, a trench located in the substrate, an N-type epitaxial layer and a P-type well located in the substrate, a source and a drain respectively located at two sides of the trench, a first gate and a second gate located in the trench, and a dielectric layer between the first gate and the second gate, wherein the second gate is located on the first gate and nearby the source, an intersecting portion between the N-type epitaxial layer and the P-type well is close to the dielectric layer, the first gate is configured to generate charge-coupling in the substrate, and the second gate is configured to form a channel in the trench MOSFET; and an adaptive element, electrically coupled to the first gate, the second gate and the source, respectively, wherein when a potential difference between the second gate and the source is equal to or under a first predetermined value, the first gate and the source are electrically connected; when the potential difference between the second gate and the source is larger than the first predetermined value, the first gate and the source are electrically disconnected and then the first gate and the second gate are electrically connected by the adaptive element, and after a predetermined time, the first gate and the second gate are electrically disconnected and then the first gate and the source are electrically connected by the adaptive element. |
| Claim: | 2. The adaptive duo-gate MOSFET as recited in claim 1 , wherein the adaptive element comprises: a first switching element, coupled to the first gate and the second gate respectively; a second switching element, coupled to the first gate and the source respectively; and a control circuit, determining ON and OFF of the first switching element and the second switching element according to the potential difference between the second gate and the source. |
| Claim: | 3. The adaptive duo-gate MOSFET as recited in claim 2 , wherein the adaptive element further comprises a potential detection element for detecting potentials of the second gate and the source and generating a potential difference signal to the control circuit. |
| Claim: | 4. The adaptive duo-gate MOSFET as recited in claim 1 , further comprising a clock coupled to the adaptive element, wherein the clock starts counting the predetermined time after the first gate and the second gate are electrically connected, and the first gate and the second gate are electrically disconnected after the clock finishes counting the predetermined time. |
| Claim: | 5. The adaptive duo-gate MOSFET as recited in claim 1 , wherein a finishing time point of the predetermined time is when the potential difference between the second gate and the source is smaller than a second predetermined value. |
| Claim: | 6. The adaptive duo-gate MOSFET as recited in claim 5 , wherein the second predetermined value is larger than the first predetermined value. |
| Claim: | 7. The adaptive duo-gate MOSFET as recited in claim 5 , wherein the second predetermined value is equal to the first predetermined value. |
| Claim: | 8. The adaptive duo-gate MOSFET as recited in claim 1 , wherein the dielectric layer comprises an inter-poly dielectric (IPD) layer. |
| Claim: | 9. An operating method for the adaptive duo-gate MOSFET as recited in claim 1 , the operating method comprising: obtaining the potential difference between the second gate and the source of the trench MOSFET; when the potential difference is equal to or under the first predetermined value, electrically connecting the first gate and the source; when the potential difference is greater than the first predetermined value, electrically disconnecting the first gate and the source; after the first gate and the source are disconnected, electrically connecting the first gate and the second gate; after a predetermined time, electrically disconnecting the first gate and the second gate; and after the first gate and the second gate are disconnected, electrically connecting the first gate and the source. |
| Claim: | 10. The operating method as recited in claim 9 , further comprising: when the potential difference is smaller than the first predetermined value, maintaining a connected state between the first gate and the source and a disconnected state between the first gate and the second gate. |
| Claim: | 11. The operating method as recited in claim 9 , further comprising: after the first gate and the second gate are connected, start counting the predetermined time; and when finished counting the predetermined time, disconnecting the first gate and the second gate. |
| Claim: | 12. The operating method as recited in claim 9 , wherein a finishing time point of the predetermined time is when the potential difference is smaller than a second predetermined value. |
| Patent References Cited: | 6870217 March 2005 Elbanhawy 7195979 March 2007 Elbanhawy 2003/0079163 April 2003 Hashimoto 2004/0135201 July 2004 Elbanhawy 2006/0214222 September 2006 Challa 2008/0048709 February 2008 Lee 2009/0278186 November 2009 Sonsky |
| Other References: | B. Jayant Baliga, “ CC-MOSFET Structure,” Advanced Power MOSFET Concepts, Jun. 26, 2010, pp. 159-193. cited by applicant |
| Assistant Examiner: | Mattison, David |
| Primary Examiner: | Donovan, Lincoln |
| Attorney, Agent or Firm: | Jianq Chyun IP Office |
| رقم الانضمام: | edspgr.09602099 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |