Patent
High frequency cable, high frequency coil and method for manufacturing high frequency cable
| العنوان: | High frequency cable, high frequency coil and method for manufacturing high frequency cable |
|---|---|
| Patent Number: | 9,123,456 |
| تاريخ النشر: | September 01, 2015 |
| Appl. No: | 13/624395 |
| Application Filed: | September 21, 2012 |
| مستخلص: | A high frequency cable includes: a central conductor made from aluminum or an aluminum alloy; a covering layer made from copper covering the central conductor, and having a fiber-like structure in a longitudinal direction; and an intermetallic compound layer formed between the central conductor and the covering layer and having greater volume resistivity than the covering layer, wherein a cross-sectional area of the covering layer is 15% or less of an entire cross-sectional area including the central conductor, the intermetallic compound layer and the covering layer. |
| Inventors: | Shinmoto, Takashi (Noda, JP); Yoshida, Shotaro (Edogawa-ku, JP); Katayama, Shinji (Numazu, JP); Toda, Taikou (Hamamatsu, JP); Kato, Takamasa (Chiba, JP); Daibo, Masanori (Sakura, JP); Kawakami, Akio (Numazu, JP) |
| Assignees: | FUJIKURA LTD. (Tokyo, JP) |
| Claim: | 1. A high frequency cable, comprising: a central conductor made from aluminum or an aluminum alloy; a covering layer made from copper covering the central conductor, and having a fiber-like structure in a longitudinal direction; and an intermetallic compound layer formed between the central conductor and the covering layer and having greater volume resistivity than the covering layer, wherein a cross-sectional area of the covering layer is 15% or less of an entire cross-sectional area including the central conductor, the intermetallic compound layer and the covering layer, and wherein a thickness of the intermetallic compound layer is between 10 nm and less than 1 μm. |
| Claim: | 2. The high frequency cable according to claim 1 , wherein the intermetallic compound layer is formed so as to shift such that a composition thereof obliquely shifts from the central conductor through the covering layer. |
| Claim: | 3. The high frequency cable according to claim 1 , wherein the intermetallic compound layer is formed by wire drawing of the central conductor covered by the covering layer using dies at multiple steps, each of the dies having a cross-section reduction rate of 20% or higher. |
| Claim: | 4. The high frequency cable according to claim 1 , wherein volume resistivity of the intermetallic compound layer is 10 μΩcm or higher. |
| Claim: | 5. A high frequency coil using a high frequency cable, wherein the high frequency cable comprises: a central conductor made from aluminum or an aluminum alloy; a covering layer made from copper covering the central conductor, and having a fiber-like structure in a longitudinal direction; and an intermetallic compound layer formed between the central conductor and the covering layer and having greater volume resistivity than the covering layer, and a cross-sectional area of the covering layer is 15% or less of an entire cross-sectional area which includes the central conductor, the intermetallic compound layer and the covering layer, and wherein a thickness of the intermetallic compound layer is between 10 nm and less than 1 μm. |
| Patent References Cited: | 3096577 July 1963 Carlson et al. 4013211 March 1977 Atman 6178623 January 2001 Kitazawa et al. 101202130 June 2008 101202130 June 2008 54-155915 December 1979 60-125357 July 1985 62-76216 April 1987 62-263978 November 1987 S62263978 November 1987 04-171609 June 1992 4-230905 August 1992 8-197281 August 1996 8197281 August 1996 11-57848 March 1999 2002-150633 May 2002 2004-039477 February 2004 2004-139832 May 2004 2005-108654 April 2005 2006-190575 July 2006 2008-262808 October 2008 2008-262808 October 2008 2009-129550 June 2009 2010-36237 February 2012 2006/046358 May 2006 |
| Other References: | Bonding mechanism, microstructure and properties of the bimetallic wires by clad-drawing, Yong Qing et al., 2009. cited by examiner Office Action issued by Korean Patent Office in Korean Application No. 10-2012-7027195 mailed Jul. 18, 2014. cited by applicant Office Action issued by Chinese Patent Office in Chinese Application No. 201180015433.9 mailed Feb. 12, 2014. cited by applicant Ma Yong-qing, et al., “Bonding mechanism, microstructure and properties of the bimetallic wires by clad-drawing”, Functional Material, 2009, vol. 40, p. 94-97. cited by applicant Office Action issued by the Japanese Patent Office in Japanese Application No. 2010-549365 dated Feb. 5, 2013. cited by applicant Fujikura News No. 340, Nov. 11, 2009, pp. 1-2 with (English translation). cited by applicant |
| Assistant Examiner: | Paghadal, Paresh |
| Primary Examiner: | Thompson, Timothy |
| Attorney, Agent or Firm: | Sughrue Mion, PLLC |
| رقم الانضمام: | edspgr.09123456 |
| قاعدة البيانات: | USPTO Patent Grants |
| الوصف غير متاح. |