رسالة جامعية
Effects of Low-temperature Forming Gas Anneal on AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors
| العنوان: | Effects of Low-temperature Forming Gas Anneal on AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors |
|---|---|
| العنوان البديل: | 使用低溫氫氣混合氣體處理大氣常壓電漿輔助化學氣相沉積製備非晶銦鎵鋅氧薄膜電晶體研究 |
| المؤلفون: | Li, Guan-Yi, 李冠毅 |
| مرشدي الرسالة: | Chang, Kow-Ming, 張國明 |
| سنة النشر: | 2018 |
| المجموعة: | National Digital Library of Theses and Dissertations in Taiwan |
| الوصف: | 106 Conventional a-Si TFTs possesses obviously disadvantages in transistor operation, such as high subthreshold swing (SS), low field-effect mobility, and higher turn on voltage. For the purpose of resolving above problems, we gradually develop to replace a-Si TFTs with low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) in the past years. But low-temperature polycrystalline-silicon thin-film transistors still have some serious problem in the future demand for technology trends, these own high off-current, low transparency and uniformity, low flexible property and higher process cost. In the future, a large number of companies will invest in low-power mobile products, flexible electronics book, high resolution(4K) television and large size television and high-frame rate displays. Therefore, the amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) has been investigated widely to satisfy future electronic product of requirement in next generation of active-matrix organic light- emitting diode (AMOLED) screens such as the I-phone X displays and large size OLED television, due to a-IGZO of TFTs excellent field-effect mobility (>10 cm2/V．S), the a-IGZO of TFTs with higher Ion/Ioff ratio (>106), and better thermal stability. In this investigation, a-IGZO channel layer is fabricated by atmospheric-pressure PECVD (AP-PECVD) in atmosphere without vacuum system so that we could not only save a lot of cost to maintain it also apply to large area manufacturing. We utilize forming gas to reduce process temperature and subthreshold swing, because higher temperature increase costs and don’t fabricate on flexible substrate. Furthermore, the forming gas also decrease off-state current to increase mobile products of battery usage time. We will discuss electrical performance and material analysis such as the carrier concentration of Hall measurement, the surface analysis of scanning electron microscope (SEM), the high-k dielectric analysis of transmission electron microscope (TEM), the crystalline analysis of X-Ray diffraction. |
| Original Identifier: | 106NCTU5428149 |
| نوع الوثيقة: | 學位論文 ; thesis |
| وصف الملف: | 97 |
| الإتاحة: | http://ndltd.ncl.edu.tw/handle/k7p7g4Test |
| رقم الانضمام: | edsndl.TW.106NCTU5428149 |
| قاعدة البيانات: | Networked Digital Library of Theses & Dissertations |
| الوصف غير متاح. |