رسالة جامعية
A Novel ReWritable One-Time-Programming Memory Realized by Dielectric-fuse of RRAM for Embedded Applications
| العنوان: | A Novel ReWritable One-Time-Programming Memory Realized by Dielectric-fuse of RRAM for Embedded Applications |
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| العنوان البديل: | 利用介電層熔斷崩潰之電阻式記憶單元設計新穎的內嵌式可重寫單次寫入唯讀記憶體 |
| المؤلفون: | Cheng, Hao-Wei, 程皓瑋 |
| مرشدي الرسالة: | Zhuang, Shao-Xun, 莊紹勳 |
| سنة النشر: | 2016 |
| المجموعة: | National Digital Library of Theses and Dissertations in Taiwan |
| الوصف: | 105 In the coming Internet-of-Things (IOT) era, the market have huge demand for embedded memory. In the past, One-Time-Programing memory are the most promising one because of low cost, easy-integrated on chip and excellent data retention. But the OTP can be only programmed once, which has the risk of miss-coding. However, although Multi-Time-Programming memory can program and erase lots of times, data retention is a serious problem. For the above characteristics, we design a novel rewritable OTP, RW-OTP, which combines both the multi-time programming capability and excellent data retention. First, we will introduce the bilayer RRAM, which is an important element as a storage cell by utilizing the switching characteristic between low resistance state (LRS) and high resistance state (HRS). In order to explore the physical mechanism of RRAM, we designed an experiment to locate the soft-breakdown path by the RTN measurement technique, from which we can extract the trap position and energy level by collecting the capture and emission time. We then locate the generation of traps as a function of time and complete the conductive path for three different conditions, i.e., the paths during forming, set, and reset. Results showed that, in the set path, filament links top-electrode and bottom-electrode and forms a low resistance state (LRS). In the reset path, filament is broken near the top-electrode and became a low resistance state (HRS). Moreover, the interesting characteristics of dielectric-fuse breakdown are also examined. Next, according to the above understandings on the filament formation, we design a new type of OTP which can modify the data at first and store the data permanently when users confirm it is of no problem. The fuse characteristics have excellent retention ability for security requirement. At the circuit level, the one selector and one RRAM (1S1R) array has been designed to resist the sneak current. Other experiments shows that this new type of RW-OTP has the ability of large window, disturb immunity, excellent data retention, and great endurance. |
| Original Identifier: | 105NCTU5428028 |
| نوع الوثيقة: | 學位論文 ; thesis |
| وصف الملف: | 76 |
| الإتاحة: | http://ndltd.ncl.edu.tw/handle/50476237590221207841Test |
| رقم الانضمام: | edsndl.TW.105NCTU5428028 |
| قاعدة البيانات: | Networked Digital Library of Theses & Dissertations |
| الوصف غير متاح. |