دورية أكاديمية
Formation of graphene with low density of defects on SiC assisted by plasma oxidation Structure and composition of SiO2/SiC interface depending on oxidation processes
| العنوان: | Formation of graphene with low density of defects on SiC assisted by plasma oxidation Structure and composition of SiO2/SiC interface depending on oxidation processes / SiCのプラズマ酸化を援用した低欠陥グラフェン形成に関する研究 |
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| المؤلفون: | Kenta Arima, Kentaro Kawai, Kohei Hosoo, Mizuho Morita, Ryota Ito, Yasuhisa Sano, 伊藤 亮太, 佐野 泰久, 川合 健太郎, 有馬 健太, 森田 瑞穂, 細尾 幸平 |
| المصدر: | Proceedings of JSPE Semestrial Meeting. 2016, :661 |
| قاعدة البيانات: | J-STAGE |
| DOI: | 10.11522/pscjspe.2016A.0_661 |
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