دورية أكاديمية

Competition between Carrier Injection and Structural Distortions in Electron‐Doped Perovskite Nickelate Thin Films

التفاصيل البيبلوغرافية
العنوان: Competition between Carrier Injection and Structural Distortions in Electron‐Doped Perovskite Nickelate Thin Films
المؤلفون: Marios Hadjimichael, Bernat Mundet, Claribel Domínguez, Adrien Waelchli, Gabriele De Luca, Jonathan Spring, Simon Jöhr, Siobhan McKeown Walker, Cinthia Piamonteze, Duncan T. L. Alexander, Jean‐Marc Triscone, Marta Gibert
المصدر: Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
بيانات النشر: Wiley-VCH, 2023.
سنة النشر: 2023
المجموعة: LCC:Electric apparatus and materials. Electric circuits. Electric networks
LCC:Physics
مصطلحات موضوعية: doping, metal–insulator transitions, NdNiO 3, octahedral rotations, PbNiO 3, rare‐earth nickelates, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
الوصف: Abstract The discovery of superconductivity in doped infinite‐layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole‐doped perovskite rare‐earth nickelate thin films, while most electron‐doping studies have been performed on bulk materials so far. To tackle this imbalance, a detailed study that addresses doping of NdNiO3 thin films using A‐site substitution is presented, using Pb as a dopant and taking advantage of its valence‐skipping nature. Through a combination of complementary techniques including X‐ray diffraction, transport measurements, X‐ray absorption spectroscopy, electron energy‐loss spectroscopy and scanning transmission electron microscopy, the valence of Pb in the Nd1−xPbxNiO3 structure is confirmed to be 4+, and the behavior of the doped thin films is found to be controlled by a competition between carrier injection and structural distortions, which respectively reduce and increase the metal‐to‐insulator transition temperature. This work provides a systematic study of electron doping in NdNiO3, demonstrating that A‐site substitution with Pb is an appropriate method for such doping in perovskite rare‐earth nickelate systems.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2199-160X
العلاقة: https://doaj.org/toc/2199-160XTest
DOI: 10.1002/aelm.202201182
الوصول الحر: https://doaj.org/article/9f6c6664dea44b149e70e2c4131417d6Test
رقم الانضمام: edsdoj.9f6c6664dea44b149e70e2c4131417d6
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2199160X
DOI:10.1002/aelm.202201182