دورية أكاديمية

Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices

التفاصيل البيبلوغرافية
العنوان: Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices
المؤلفون: Xiaohan Wu, Yuqian Gu, Ruijing Ge, Martha I. Serna, Yifu Huang, Jack C. Lee, Deji Akinwande
المصدر: npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-12 (2022)
بيانات النشر: Nature Portfolio, 2022.
سنة النشر: 2022
المجموعة: LCC:Materials of engineering and construction. Mechanics of materials
LCC:Chemistry
مصطلحات موضوعية: Materials of engineering and construction. Mechanics of materials, TA401-492, Chemistry, QD1-999
الوصف: Abstract Monolayer molybdenum disulfide has been previously discovered to exhibit non-volatile resistive switching behavior in a vertical metal-insulator-metal structure, featuring ultra-thin sub-nanometer active layer thickness. However, the reliability of these nascent 2D-based memory devices was not previously investigated for practical applications. Here, we employ an electron irradiation treatment on monolayer MoS2 film to modify the defect properties. Raman, photoluminescence, and X-ray photoelectron spectroscopy measurements have been performed to confirm the increasing amount of sulfur vacancies introduced by the e-beam irradiation process. The statistical electrical studies reveal the reliability can be improved by up to 1.5× for yield and 11× for average DC cycling endurance in the devices with a moderate radiation dose compared to unirradiated devices. Based on our previously proposed virtual conductive-point model with the metal ion substitution into sulfur vacancy, Monte Carlo simulations have been performed to illustrate the irradiation effect on device reliability, elucidating a clustering failure mechanism. This work provides an approach by electron irradiation to enhance the reliability of 2D memory devices and inspires further research in defect engineering to precisely control the switching properties for a wide range of applications from memory computing to radio-frequency switches.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2397-7132
العلاقة: https://doaj.org/toc/2397-7132Test
DOI: 10.1038/s41699-022-00306-8
الوصول الحر: https://doaj.org/article/9bf848e43dd34101b57f7e0dd6b4f08aTest
رقم الانضمام: edsdoj.9bf848e43dd34101b57f7e0dd6b4f08a
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:23977132
DOI:10.1038/s41699-022-00306-8