دورية أكاديمية

FETs for Analog Neural MACs

التفاصيل البيبلوغرافية
العنوان: FETs for Analog Neural MACs
المؤلفون: Rinku Rani Das, T. R. Rajalekshmi, Sruthi Pallathuvalappil, Alex James
المصدر: IEEE Access, Vol 12, Pp 54019-54048 (2024)
بيانات النشر: IEEE, 2024.
سنة النشر: 2024
المجموعة: LCC:Electrical engineering. Electronics. Nuclear engineering
مصطلحات موضوعية: Field effect transistor (FET), CMOS, memristors, multiply and accumulate (MAC), 2D materials, FeFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
الوصف: This study provides a comprehensive view on neural network systems with implemented with crossbar circuits, and device-level understanding of modern FET technologies in neuromorphic computing. This work categorizes and analyzes various transistor types, including ion-gate, ferroelectric, and floating-gate transistors, shedding light on their unique advantages and applications in neuromorphic computing. In this overview, we explore the fundamental principles, recent advancements, and significant trends in transistor-based neuromorphic devices, providing valuable insights into this innovative field. This work also examines resistive memories and 2D materials, that could revolutionize transistor fabrication for neuromorphic devices. Further, various research challenges, limitations, and potential research directions are discussed.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2169-3536
العلاقة: https://ieeexplore.ieee.org/document/10496090Test/; https://doaj.org/toc/2169-3536Test
DOI: 10.1109/ACCESS.2024.3387094
الوصول الحر: https://doaj.org/article/ae9af8ecf2f54ffb9f0fe03fd6e95c24Test
رقم الانضمام: edsdoj.9af8ecf2f54ffb9f0fe03fd6e95c24
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21693536
DOI:10.1109/ACCESS.2024.3387094