دورية أكاديمية

The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage

التفاصيل البيبلوغرافية
العنوان: The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage
المؤلفون: Xue Ren, Liang Liu, Bin Cui, Bin Cheng, Xiangxiang Zhao, Taiyu An, Ruiyue Chu, Mingfang Zhang, Weikang Liu, Guangjun Zhou, Weijie Kuai, Jifan Hu
المصدر: Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
بيانات النشر: Wiley-VCH, 2024.
سنة النشر: 2024
المجموعة: LCC:Electric apparatus and materials. Electric circuits. Electric networks
LCC:Physics
مصطلحات موضوعية: chiral magnetism, electrical control of magnetism, ferrimagnetic film, ionic migration, topological Hall effect, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
الوصف: Abstract The topological Hall effect (THE) presents hump signals in the Hall resistance versus magnetic field hysteresis loop, showing promise for future spintronics due to its robust chiral magnetic textures. Here, it is shown that solid‐state protonic gating can control possible topological magnetic structures in CoGd thin films. Injecting H+ leads to sizable hump signals in the film. Magneto‐optical Kerr microscopy shows that induced hump signals in transporting measurements do not scale with magnetization, supporting topological magnetism. Successive hydrogen ion extraction completely erases the effect. Thus, topological magnetism manipulations are reversible, nonvolatile, and effective. Ab inito calculations and effective chiral spin models demonstrate that hydrogen injection remarkably enhances the Dzyaloshinskii–Moriya interaction over fourfold, stabilizing chiral structures contributing to the large THE. These findings reveal the vital role of hydrogen ions in topological magnetism and suggest that amorphous ferrimagnetic CoGd thin films are outstanding platforms for realizing controllable topological spintronics at room temperature.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2199-160X
العلاقة: https://doaj.org/toc/2199-160XTest
DOI: 10.1002/aelm.202300752
الوصول الحر: https://doaj.org/article/ac77acfc21214c958254d3c04d8e66caTest
رقم الانضمام: edsdoj.77acfc21214c958254d3c04d8e66ca
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2199160X
DOI:10.1002/aelm.202300752