دورية أكاديمية
Emerging MoS2 Wafer-Scale Technique for Integrated Circuits
| العنوان: | Emerging MoS2 Wafer-Scale Technique for Integrated Circuits |
|---|---|
| المؤلفون: | Zimeng Ye, Chao Tan, Xiaolei Huang, Yi Ouyang, Lei Yang, Zegao Wang, Mingdong Dong |
| المصدر: | Nano-Micro Letters, Vol 15, Iss 1, Pp 1-42 (2023) |
| بيانات النشر: | SpringerOpen, 2023. |
| سنة النشر: | 2023 |
| المجموعة: | LCC:Technology |
| مصطلحات موضوعية: | Wafer-scale growth, Molybdenum disulfide, Gas deposition, Integrated circuits, Technology |
| الوصف: | Highlights This review summarized the state of the art of MoS2 from their controllable growth and potential application in integrated circuit. The influence of promoter, substrate, pressure, catalyst and precursor on the nucleation and growth are discussed. The current challenges and future perspectives of wafer-scale MoS2 are outlined from the materials and device applications. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 2311-6706 2150-5551 |
| العلاقة: | https://doaj.org/toc/2311-6706Test; https://doaj.org/toc/2150-5551Test |
| DOI: | 10.1007/s40820-022-01010-4 |
| الوصول الحر: | https://doaj.org/article/738a6c6b3b0f4c8e979230da2496e996Test |
| رقم الانضمام: | edsdoj.738a6c6b3b0f4c8e979230da2496e996 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 23116706 21505551 |
|---|---|
| DOI: | 10.1007/s40820-022-01010-4 |