دورية أكاديمية
Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD
| العنوان: | Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD |
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| المؤلفون: | Lian Zhang, Rong Wang, Zhe Liu, Zhe Cheng, Xiaodong Tong, Jianxing Xu, Shiyong Zhang, Yun Zhang, Fengxiang Chen |
| المصدر: | Materials, Vol 14, Iss 18, p 5339 (2021) |
| بيانات النشر: | MDPI AG, 2021. |
| سنة النشر: | 2021 |
| المجموعة: | LCC:Technology LCC:Electrical engineering. Electronics. Nuclear engineering LCC:Engineering (General). Civil engineering (General) LCC:Microscopy LCC:Descriptive and experimental mechanics |
| مصطلحات موضوعية: | InGaN, hole, interstitial Mg, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85 |
| الوصف: | This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1996-1944 |
| العلاقة: | https://www.mdpi.com/1996-1944/14/18/5339Test; https://doaj.org/toc/1996-1944Test |
| DOI: | 10.3390/ma14185339 |
| الوصول الحر: | https://doaj.org/article/a6478036726c4b1096efedc2b457cdbcTest |
| رقم الانضمام: | edsdoj.6478036726c4b1096efedc2b457cdbc |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 19961944 |
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| DOI: | 10.3390/ma14185339 |