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Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory

التفاصيل البيبلوغرافية
العنوان: Polymerized hybrid Hf-based hydroquinone/Al2O3 bilayer structure by molecular/atomic layer deposition for non-volatile resistive random access memory
المؤلفون: Jin Lei, Wen-Juan Ding, Chang Liu, Di Wu, Wei-Min Li, Ai-Dong Li
المصدر: APL Materials, Vol 9, Iss 12, Pp 121110-121110-8 (2021)
بيانات النشر: AIP Publishing LLC, 2021.
سنة النشر: 2021
المجموعة: LCC:Biotechnology
LCC:Physics
مصطلحات موضوعية: Biotechnology, TP248.13-248.65, Physics, QC1-999
الوصف: In this work, we fabricated the Pt/Hf-based hydroquinone (Hf-HQ)/Al2O3/TiN/Si bilayer hybrid memory by molecular layer deposition/atomic layer deposition. The hybrid memory units exhibit electroforming-free bipolar resistive switching (RS) characteristics with tiny fluctuation of operation voltages within 0.2 V, ON/OFF ratio above 102, and good endurance/retention properties. Meanwhile, the multi-state data storage capability is confirmed in hybrid devices. The RS mechanism based on conducting filaments has been proposed. The favorable linkage and rupture of the conducting filament prefer to occur at the interface of the hybrid Hf-HQ layer and Al2O3 layer, resulting in the brilliant performances. Furthermore, flexible hybrid memory devices fabricated on bendable mica show comparable RS behaviors to the Si-based ones at the bending radius of 7.5 mm, indicative of great potential in flexible multilevel resistive random access memory applications.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2166-532X
العلاقة: https://doaj.org/toc/2166-532XTest
DOI: 10.1063/5.0073341
الوصول الحر: https://doaj.org/article/c0aa67ec2f6c4dc0b3e8e1672cf85d70Test
رقم الانضمام: edsdoj.0aa67ec2f6c4dc0b3e8e1672cf85d70
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:2166532X
DOI:10.1063/5.0073341