التفاصيل البيبلوغرافية
| العنوان: |
Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices |
| المؤلفون: |
Niu, ZC, Ni, HQ, Xu, XH, Zhang, W, Xu, YQ, Wu, RH, Niu, ZC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. |
| سنة النشر: |
2003 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd |
| الوصف: |
Using Keating's semiempirical valence force field model and Monte Carlo simulation, we calculate the bond distributions and atom positions of GaAs/GaInNAsSb superlattices. The electronic structures of the superlattices are calculated using the folded spectrum method combined with an empirical pseudopotential proposed by Williamson The effects of N and Sb on superlattice energy levels are discussed. The deterioration of the optical properties induced by N is explained by the localization of the conduction-band states around the N atom. The electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the GaAs and GaInAs. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
PHYSICAL REVIEW B; Niu, ZC; Ni, HQ; Xu, XH; Zhang, W; Xu, YQ; Wu, RH .Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices ,PHYSICAL REVIEW B,DEC 2003,68 (23):Art.No.235326; http://ir.semi.ac.cn/handle/172111/8204Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/8204Test |
| رقم الانضمام: |
edsbas.F8835FCB |
| قاعدة البيانات: |
BASE |
