التفاصيل البيبلوغرافية
| العنوان: |
The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy |
| المؤلفون: |
Liu XL, Lu DC, Wang LS, Wang XH, Wang D, Lin LY, Liu XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. |
| سنة النشر: |
1998 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Movpe, Gan Buffer Layer, Growth Rate, Trimethylgallium, Growth Parameters, Mechanisms, Thermal-decomposition, Quality, Ammonia, Diodes, Mocvd, Gaas, 半导体材料, atomic layer deposition, pyrolysis, mechanism, gallium arsenide, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd |
| الوصف: |
The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF CRYSTAL GROWTH; Liu XL; Lu DC; Wang LS; Wang XH; Wang D; Lin LY .The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,193(1-2):23-27; http://ir.semi.ac.cn/handle/172111/13098Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/13098Test |
| رقم الانضمام: |
edsbas.F64CB42D |
| قاعدة البيانات: |
BASE |
