مؤتمر
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV
| العنوان: | 25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV |
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| المؤلفون: | Lee, Dong Uk, Kim, Kyung Whan, Kim, Kwan Weon, Kim, Hongjung, Kim, Ju Young, Park, Young Jun, Kim, Jae Hwan, Kim, Dae Suk, Park, Heat Bit, Shin, Jin Wook, Cho, Jang Hwan, Kwon, Ki Hun, Kim, Min Jeong, Lee, Jaejin, Park, Kun Woo, Chung, Byongtae, Hong, Sungjoo |
| المصدر: | 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) |
| بيانات النشر: | IEEE |
| سنة النشر: | 2014 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/isscc.2014.6757501 |
| الإتاحة: | https://doi.org/10.1109/isscc.2014.6757501Test http://xplorestaging.ieee.org/ielx7/6747109/6757318/06757501.pdf?arnumber=6757501Test |
| رقم الانضمام: | edsbas.F39AE5A5 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/isscc.2014.6757501 |
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