دورية أكاديمية

Study on Diffusive Reaction Between C-Si System and Mo Metal

التفاصيل البيبلوغرافية
العنوان: Study on Diffusive Reaction Between C-Si System and Mo Metal
المؤلفون: Li, C Q, Liu, B L, Zhao, C X, Feng, X Y
المصدر: IOP Conference Series: Materials Science and Engineering ; volume 678, issue 1, page 012023 ; ISSN 1757-8981 1757-899X
بيانات النشر: IOP Publishing
سنة النشر: 2019
الوصف: Diffusive reaction layer on Mo metal covered by C powder (Si powder or SiC powder, i.e. C-Si system) and heat treated in vacuum ranging from 600°C to 1600°C for 2 h was investigated. Microstructure of interfacial reaction layer between C-Si system/Mo metal were characterized by XRD, SEM, and mechanical properties were compared between reaction layer based on Mo and Mo. The results show: after Si diffusing into Mo, Mo 3 Si phase appears after heat treatment higher than 1000°C, Mo 5 Si 3 phase forms at 1400°C, even MoSi 2 phase appears; after C diffusing into Mo, Mo 2 C phase appears firstly, then MoC forms at 1400°C; after SiC diffusing into Mo, Mo 2 C appears first, Mo3Si then forms at 1200°C, Mo 5 Si 3 (Mo2C and Mo5Si3C) mutiphase coexist on Mo surface after heat treatment high than 1400°C. Tensile and specific elongation of C-Si system/Mo vary little, but Vickers hardness of Mo diffused by C or Si comparing with Mo enhance distinctly.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1088/1757-899x/678/1/012023
DOI: 10.1088/1757-899X/678/1/012023/pdf
DOI: 10.1088/1757-899X/678/1/012023
الإتاحة: https://doi.org/10.1088/1757-899x/678/1/012023Test
حقوق: http://creativecommons.org/licenses/by/3.0Test/ ; https://iopscience.iop.org/info/page/text-and-data-miningTest
رقم الانضمام: edsbas.F08C4AF2
قاعدة البيانات: BASE