التفاصيل البيبلوغرافية
| العنوان: |
Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing |
| المؤلفون: |
Zhao H (Zhao Huan), Xu YQ (Xu Ying-Qiang), Ni HQ (Ni Hai-Qiao), Han Q (Han Qin), Wu RH (Wu Rong-Han), Niu ZC (Niu Zhi-Chuan), Zhao, H, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: zhaohuan@red.semi.ac.cn, zcniu@red.semi.ac.cn |
| سنة النشر: |
2006 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Molecular-beam Epitaxy, Improved Luminescence Efficiency, Origin, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition |
| الوصف: |
We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
CHINESE PHYSICS LETTERS; Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) .Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing ,CHINESE PHYSICS LETTERS,2006,23(9):2579-2582; http://ir.semi.ac.cn/handle/172111/10422Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/10422Test |
| رقم الانضمام: |
edsbas.E0D183CA |
| قاعدة البيانات: |
BASE |
