دورية أكاديمية

A Dynamic Pumping Model for a Vacuum-Sealed Gigawatt Repetitively Operated High-Power Microwave Source

التفاصيل البيبلوغرافية
العنوان: A Dynamic Pumping Model for a Vacuum-Sealed Gigawatt Repetitively Operated High-Power Microwave Source
المؤلفون: Shunyu Tang, Ripin Wang, Junpu Ling, Qiang Zhang, Xu Chu, Zeyang Liu, Tao Xun
المصدر: Electronics; Volume 11; Issue 21; Pages: 3444
بيانات النشر: Multidisciplinary Digital Publishing Institute
سنة النشر: 2022
المجموعة: MDPI Open Access Publishing
مصطلحات موضوعية: high-power microwave source, gigawatt-level repetitive rate, direct-simulation Monte Carlo method, transit-time oscillator, dynamic pumping model
الوصف: In this study, a dynamic pumping model was established for a vacuum-sealed, gigawatt-class, repetitively operated transit-time oscillator (TTO) based on the direct-simulation Monte Carlo (DSMC) method, and the pressure distribution of the model at different times and locations was analyzed. The simulation results showed that the maximum pressure at the diode was an order of magnitude larger than the equilibrium pressure, and the pressure recovery time was three times the duration of a single pulse. To verify the accuracy of the simulation results, experiments were conducted in a vacuum-sealed hard-tube TTO structure with a repetition rate of 10 Hz and the pressure was monitored at the vacuum diode. The diode voltage was about 500 kV and the beam current was 8 kA. Further, the average microwave power was 1 GW with a pulse width of 40 ns. The experimental results revealed that the equilibrium pressure at the vacuum diode was 4.0 × 10−3 Pa, and the pressure recovery time was three times the duration of a single pulse. These results were consistent with the simulation results, which indicates that the proposed model can provide technical support for subsequent vacuum-maintenance experiments.
نوع الوثيقة: text
وصف الملف: application/pdf
اللغة: English
العلاقة: https://dx.doi.org/10.3390/electronics11213444Test
DOI: 10.3390/electronics11213444
الإتاحة: https://doi.org/10.3390/electronics11213444Test
حقوق: https://creativecommons.org/licenses/by/4.0Test/
رقم الانضمام: edsbas.E05A51E3
قاعدة البيانات: BASE