التفاصيل البيبلوغرافية
العنوان: |
Parameters Optimization of Intermediate Band Solar Cells: Cases of PbTe/CdTe, PbSe/ZnTe and InN/GaN Quantum Dots |
المؤلفون: |
Laura M. Pérez, Asmae EL Aouami, Kawtar Feddi, Vittorianna Tasco, Abdellatif Ben Abdellah, Francis Dujardin, Maykel Courel, Javier A. Riquelme, David Laroze, EL Mustapha Feddi |
المصدر: |
Crystals; Volume 12; Issue 7; Pages: 1002 |
بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
سنة النشر: |
2022 |
المجموعة: |
MDPI Open Access Publishing |
مصطلحات موضوعية: |
intermediate band solar cells, quantum dots, power conversion efficiency |
الوصف: |
Photovoltaic cells, based on quantum dots implementation in the intrinsic region, are one of the most widely studied concepts nowadays to obtain a high solar conversion efficiency. The challenge in this third generation of solar cells is to find a good combination of materials that allows obtaining higher efficiency with low cost. In this study, we consider a juxtaposition of two kinds of quantum dots (dot/barrier) inside the I region of the PIN junction: the first combination of semiconductors includes the two configurations, PbTe/CdTe and PbSe/ZnTe, and the second combination is InN/GaN. Thus the intermediate band can be tailored by controlling the size of the dots and the inter-dot distances. The principal interest of this investigation is to determine the optimized parameters (the dot size and the inter-dot distance), leading to obtain a better solar cell efficiency. Intermediate bands, their positions, and their widths, are determined using 3D confined particles (electron and hole). Their energy levels are determined by solving the Schrödinger equation and solving the well-known dispersion relation in the Kronig–Penney model. |
نوع الوثيقة: |
text |
وصف الملف: |
application/pdf |
اللغة: |
English |
العلاقة: |
https://dx.doi.org/10.3390/cryst12071002Test |
DOI: |
10.3390/cryst12071002 |
الإتاحة: |
https://doi.org/10.3390/cryst12071002Test |
حقوق: |
https://creativecommons.org/licenses/by/4.0Test/ |
رقم الانضمام: |
edsbas.D7F48E9 |
قاعدة البيانات: |
BASE |