التفاصيل البيبلوغرافية
| العنوان: |
Spatially-resolved UV-C emission in epitaxial monolayer boron nitride |
| المؤلفون: |
Rousseau, A, Plo, J, Valvin, P, Cheng, T S, Bradford, J, James, T S S, Wrigley, J, Mellor, C J, Beton, P H, Novikov, S V, Jacques, V, Gil, B, Cassabois, G |
| المساهمون: |
Engineering and Physical Sciences Research Council, Agence Nationale de la Recherche |
| المصدر: |
2D Materials ; volume 11, issue 2, page 025026 ; ISSN 2053-1583 |
| بيانات النشر: |
IOP Publishing |
| سنة النشر: |
2024 |
| الوصف: |
We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ∼ 6.045 eV. The spatial variations of the photoluminescence energy are found to be around ∼ 10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ∼ 25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| DOI: |
10.1088/2053-1583/ad2f45 |
| DOI: |
10.1088/2053-1583/ad2f45/pdf |
| الإتاحة: |
https://doi.org/10.1088/2053-1583/ad2f45Test |
| حقوق: |
http://creativecommons.org/licenses/by/4.0Test ; https://iopscience.iop.org/info/page/text-and-data-miningTest |
| رقم الانضمام: |
edsbas.C9A4650C |
| قاعدة البيانات: |
BASE |
