التفاصيل البيبلوغرافية
| العنوان: |
Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution |
| المؤلفون: |
A. S. M. Zadid Shifat, Isaac Stricklin, Ravi Kiran Chityala, Arjun Aryal, Giovanni Esteves, Aleem Siddiqui, Tito Busani |
| المصدر: |
Nanomaterials; Volume 13; Issue 2; Pages: 274 |
| بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
| سنة النشر: |
2023 |
| المجموعة: |
MDPI Open Access Publishing |
| مصطلحات موضوعية: |
scandium doped aluminum nitride (ScAlN), wet etching, tetramethyl ammonium hydroxide (TMAH), annealing, thin films |
| الوصف: |
A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1−xN a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating ScxAl1−xN devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of ScxAl1−xN (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices. |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| العلاقة: |
Nanophotonics Materials and Devices; https://dx.doi.org/10.3390/nano13020274Test |
| DOI: |
10.3390/nano13020274 |
| الإتاحة: |
https://doi.org/10.3390/nano13020274Test |
| حقوق: |
https://creativecommons.org/licenses/by/4.0Test/ |
| رقم الانضمام: |
edsbas.C3BBD192 |
| قاعدة البيانات: |
BASE |
