دورية أكاديمية

Effect of the ultra-low arsenic flux on characteristics of In(As) nanostructures formed during droplet epitaxy

التفاصيل البيبلوغرافية
العنوان: Effect of the ultra-low arsenic flux on characteristics of In(As) nanostructures formed during droplet epitaxy
المؤلفون: Kirichenko, D V, Balakirev, S V, Chernenko, N E, Eremenko, M M, Solodovnik, M S
المصدر: Journal of Physics: Conference Series ; volume 2086, issue 1, page 012017 ; ISSN 1742-6588 1742-6596
بيانات النشر: IOP Publishing
سنة النشر: 2021
الوصف: In this paper, we present the results of an experimental study of the influence of the ultra-low arsenic flux on the parameters of In nanodroplets obtained by droplet epitaxy on the GaAs substrate. We demonstrate that the arsenic flux can be used to alter the size of droplets without changing their surface density. An increase in the arsenic flux leads to a reduction of the nanostructure size or their complete decay. However, we demonstrate that certain growth conditions allow providing saturation of the size of nanostructures (∼30 nm) which ensures good reproducibility of the process. The mechanism of ring and hole formation at various arsenic fluxes is also discussed.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1088/1742-6596/2086/1/012017
DOI: 10.1088/1742-6596/2086/1/012017/pdf
الإتاحة: https://doi.org/10.1088/1742-6596/2086/1/012017Test
حقوق: http://creativecommons.org/licenses/by/3.0Test/ ; https://iopscience.iop.org/info/page/text-and-data-miningTest
رقم الانضمام: edsbas.C269B75D
قاعدة البيانات: BASE