مؤتمر
Wafer-scale Fabrication of Vertical GaN p-n Diodes with Graded JTE Structures Using Multiple-zone Boron Implantation
| العنوان: | Wafer-scale Fabrication of Vertical GaN p-n Diodes with Graded JTE Structures Using Multiple-zone Boron Implantation |
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| المؤلفون: | Miura, Yoshinao, Hirai, Hirohisa, Nakajima, Akira, Harada, Shinsuke |
| المصدر: | 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| بيانات النشر: | IEEE |
| سنة النشر: | 2022 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/ispsd49238.2022.9813654 |
| الإتاحة: | https://doi.org/10.1109/ispsd49238.2022.9813654Test http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813654.pdf?arnumber=9813654Test |
| حقوق: | https://doi.org/10.15223/policy-029Test ; https://doi.org/10.15223/policy-037Test |
| رقم الانضمام: | edsbas.C144D382 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/ispsd49238.2022.9813654 |
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