دورية أكاديمية

Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices

التفاصيل البيبلوغرافية
العنوان: Multi-floor cascading ferroelectric nanostructures: multiple data writing-based multi-level non-volatile memory devices
المؤلفون: Seung Hyun, Owoong Kwon, Bem-yi Lee, Daehee Seol, Beomjin Park, Jae Yong Lee, Ju Hyun Lee, Yunseok Kim, Kim, JK
المساهمون: Bem-yi Lee, Ju Hyun Lee, Kim, JK
بيانات النشر: Royal Society of Chemistry
سنة النشر: 2017
المجموعة: Pohang University of Science and Technology (POSTECH): Open Access System for Information Sharing (OASIS)
مصطلحات موضوعية: FIELD-EFFECT TRANSISTORS, INFORMATION-STORAGE, TUNNEL-JUNCTIONS, POLYMER MEMORY, DENSITY ARRAY, POLARIZATION, NANOISLANDS, OPERATION, GRAPHENE
الوصف: Multiple data writing-based multi-level non-volatile memory has gained strong attention for next-generation memory devices to quickly accommodate an extremely large number of data bits because it is capable of storing multiple data bits in a single memory cell at once. However, all previously reported devices have failed to store a large number of data bits due to the macroscale cell size and have not allowed fast access to the stored data due to slow single data writing. Here, we introduce a novel three-dimensional multi-floor cascading polymeric ferroelectric nanostructure, successfully operating as an individual cell. In one cell, each floor has its own piezoresponse and the piezoresponse of one floor can be modulated by the bias voltage applied to the other floor, which means simultaneously written data bits in both floors can be identified. This could achieve multi-level memory through a multiple data writing process. ; 1 ; 1 ; 4 ; 2 ; scie ; scopus
نوع الوثيقة: article in journal/newspaper
اللغة: English
تدمد: 2040-3364
العلاقة: Nanoscale; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Chemistry; Science & Technology - Other Topics; Materials Science; Physics; https://oasis.postech.ac.kr/handle/2014.oak/37019Test; 18487; Nanoscale, v.8, no.3, pp.1691 - 1697; 000368040200054; 2-s2.0-84954157453
DOI: 10.1039/C5NR07377D
الإتاحة: https://doi.org/10.1039/C5NR07377DTest
https://oasis.postech.ac.kr/handle/2014.oak/37019Test
رقم الانضمام: edsbas.B3CE0B90
قاعدة البيانات: BASE
الوصف
تدمد:20403364
DOI:10.1039/C5NR07377D