التفاصيل البيبلوغرافية
| العنوان: |
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates |
| المؤلفون: |
Hao RT (Hao Ruiting), Xu YQ (Xu Yingqiang), Zhou ZQ (Zhou Zhiqiang), Ren ZW (Ren Zhengwei), Ni HQ (Ni Haiqiao), He ZH (He Zhenhong), Niu ZC (Niu Zhichuan), Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn |
| سنة النشر: |
2007 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Molecular-beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd |
| الوصف: |
First, GaSb epilayers were grown on (001) GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/ GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. The SL interface between InAs and GaSb is InSb-like. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF PHYSICS D-APPLIED PHYSICS; Hao, RT (Hao, Ruiting); Xu, YQ (Xu, Yingqiang); Zhou, ZQ (Zhou, Zhiqiang); Ren, ZW (Ren, Zhengwei); Ni, HQ (Ni, Haiqiao); He, ZH (He, Zhenhong); Niu, ZC (Niu, Zhichuan) .MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,NOV 7 2007,40 (21):6690-6693; http://ir.semi.ac.cn/handle/172111/9212Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/9212Test |
| رقم الانضمام: |
edsbas.B047ACDA |
| قاعدة البيانات: |
BASE |
