دورية أكاديمية
Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation
| العنوان: | Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation |
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| المؤلفون: | Kim, Hangeul, Jeon, Hansol, Lee, Dong-Ju, Kim, Ju-Young |
| المساهمون: | Samsung, Ministry of Trade, Industry and Energy, Korea Evaluation Institute of Industrial Technology |
| المصدر: | Materials Science in Semiconductor Processing ; volume 135, page 106153 ; ISSN 1369-8001 |
| بيانات النشر: | Elsevier BV |
| سنة النشر: | 2021 |
| المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
| مصطلحات موضوعية: | Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1016/j.mssp.2021.106153 |
| الإتاحة: | https://doi.org/10.1016/j.mssp.2021.106153Test https://api.elsevier.com/content/article/PII:S1369800121004911?httpAccept=text/xmlTest https://api.elsevier.com/content/article/PII:S1369800121004911?httpAccept=text/plainTest |
| حقوق: | https://www.elsevier.com/tdm/userlicense/1.0Test/ ; https://doi.org/10.15223/policy-017Test ; https://doi.org/10.15223/policy-037Test ; https://doi.org/10.15223/policy-012Test ; https://doi.org/10.15223/policy-029Test ; https://doi.org/10.15223/policy-004Test |
| رقم الانضمام: | edsbas.A80F36E2 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.mssp.2021.106153 |
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