التفاصيل البيبلوغرافية
| العنوان: |
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface |
| المؤلفون: |
Zhang JP, Sun DZ, Li XB, Wang XL, Kong MY, Zeng YP, Li JM, Lin LY, Zhang JP,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China. |
| سنة النشر: |
1999 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Gan, Hydrogen Contaminant, Gsmbe, Growth, Raman Spectrum, Stress, 半导体材料, atomic layer deposition, residual stresses, stress (mechanics), photoelasticity, thermal stresses, development, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd |
| الوصف: |
We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Furthermore, we notice that background electrons in GaN increase with hydrogen incorporation. X-ray photoelectron spectroscopy (XPS) measurements of the N1s region indicate that hydrogen is bound to nitrogen. So, the microdefect Ga.H-N is an effective nitrogen vacancy in GaN, and it may be a donor partly answering for the background electrons. (C) 1999 Elsevier Science B.V. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF CRYSTAL GROWTH; Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY .Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface ,JOURNAL OF CRYSTAL GROWTH ,1999,201(0):429-432; http://ir.semi.ac.cn/handle/172111/12896Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/12896Test |
| رقم الانضمام: |
edsbas.A75BAFF7 |
| قاعدة البيانات: |
BASE |
