Charge carrier profiling with MIR and THz s-SNOM

التفاصيل البيبلوغرافية
العنوان: Charge carrier profiling with MIR and THz s-SNOM
المؤلفون: Santos, Cristiane, Lebouvier, Édouard, Walter, Benjamin, Eliet, Sophie, Chevalier, Nicolas, Hartmann, J., Peretti, Romain, Faucher, Marc, Lampin, Jean-Francois
المساهمون: Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Nano and Microsystems - IEMN (NAM6 - IEMN), The authors are thankful for the financial support from the French National Research agency (ANR) under the program Equipex EXCELSIOR and the HYPSTER project (ANR-20CE42-0016). This research work has been partially undertaken with the support of IEMN fabrication (CMNF) and characterization (PCMP) facilities. This work was partially supported by the French Renatech network., PCMP CHOP, Renatech Network, CMNF, ANR-20-CE42-0016,HYPSTER,Microscope champ proche hyperspectral dans la gamme TéraHertz étendue(2020), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011)
المصدر: International Conference on Infrared and Millimeter Waves ; 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) ; https://hal.science/hal-04505239Test ; 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/IRMMW-THz57677.2023.10298850⟩
بيانات النشر: HAL CCSD
IEEE
سنة النشر: 2023
المجموعة: HAL-CEA (Commissariat à l'énergie atomique et aux énergies alternatives)
مصطلحات موضوعية: Optical microscopy, Charge carriers, Microscopy, Optical sensors, Optical scattering, Spatial resolution, Probes, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
جغرافية الموضوع: Montreal
الوقت: Montreal, Canada
الوصف: International audience ; In the past years, it has been shown that s-SNOM (scattering-type scanning near-field optical microscopy) is a powerful technique to probe different light-matter interactions. Among them, charge carriers present different optical responses in the mid-infrared (MIR) and terahertz (THz) regions. Here we show that THz s-SNOM is highly sensitive to small changes in charge carrier concentration in a semiconductor, with spatial resolution at the nanometer scale.
نوع الوثيقة: conference object
اللغة: English
العلاقة: hal-04505239; https://hal.science/hal-04505239Test; https://hal.science/hal-04505239/documentTest; https://hal.science/hal-04505239/file/CNSantos_Semiconductor_template-IRMMW-THz2023_v3.pdfTest
DOI: 10.1109/IRMMW-THz57677.2023.10298850
الإتاحة: https://doi.org/10.1109/IRMMW-THz57677.2023.10298850Test
https://hal.science/hal-04505239Test
https://hal.science/hal-04505239/documentTest
https://hal.science/hal-04505239/file/CNSantos_Semiconductor_template-IRMMW-THz2023_v3.pdfTest
حقوق: info:eu-repo/semantics/OpenAccess
رقم الانضمام: edsbas.A11A0C10
قاعدة البيانات: BASE
الوصف
DOI:10.1109/IRMMW-THz57677.2023.10298850