التفاصيل البيبلوغرافية
| العنوان: |
Ultrathin All‐Solid‐State MoS 2 ‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film |
| المؤلفون: |
Oh, Jungyeop, Park, Seohak, Lee, Sang Hun, Kim, Sungkyu, Lee, Hyeonji, Lee, Changhyeon, Hong, Woonggi, Cha, Jun‐Hwe, Kang, Mingu, Jin, Jun Hyup, Im, Sung Gap, Kim, Min Ju, Choi, Sung‐Yool |
| المصدر: |
Advanced Science ; volume 11, issue 23 ; ISSN 2198-3844 2198-3844 |
| بيانات النشر: |
Wiley |
| سنة النشر: |
2024 |
| المجموعة: |
Wiley Online Library (Open Access Articles via Crossref) |
| الوصف: |
Electrolyte‐gated synaptic transistors (EGSTs) have attracted considerable attention as synaptic devices owing to their adjustable conductance, low power consumption, and multi‐state storage capabilities. To demonstrate high‐density EGST arrays, 2D materials are recommended owing to their excellent electrical properties and ultrathin profile. However, widespread implementation of 2D‐based EGSTs has challenges in achieving large‐area channel growth and finding compatible nanoscale solid electrolytes. This study demonstrates large‐scale process‐compatible, all‐solid‐state EGSTs utilizing molybdenum disulfide (MoS 2 ) channels grown through chemical vapor deposition (CVD) and sub‐30 nm organic‐inorganic hybrid electrolyte polymers synthesized via initiated chemical vapor deposition (iCVD). The iCVD technique enables precise modulation of the hydroxyl group density in the hybrid matrix, allowing the modulation of proton conduction, resulting in adjustable synaptic performance. By leveraging the tunable iCVD‐based hybrid electrolyte, the fabricated EGSTs achieve remarkable attributes: a wide on/off ratio of 10 9 , state retention exceeding 10 3 , and linear conductance updates. Additionally, the device exhibits endurance surpassing 5 × 10 4 cycles, while maintaining a low energy consumption of 200 fJ/spike. To evaluate the practicality of these EGSTs, a subset of devices is employed in system‐level simulations of MNIST handwritten digit recognition, yielding a recognition rate of 93.2%. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| DOI: |
10.1002/advs.202308847 |
| الإتاحة: |
https://doi.org/10.1002/advs.202308847Test |
| حقوق: |
http://creativecommons.org/licenses/by/4.0Test/ |
| رقم الانضمام: |
edsbas.9CD2A75D |
| قاعدة البيانات: |
BASE |
