دورية أكاديمية
Room temperature magneto-optic effect in silicon light-emitting diodes
| العنوان: | Room temperature magneto-optic effect in silicon light-emitting diodes |
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| المؤلفون: | Chiodi, F., Bayliss, S., L, Barast, L., Débarre, D., Bouchiat, H., Friend, R., H, Chepelianskii, Alexei D. |
| المساهمون: | Centre de Nanosciences et de Nanotechnologies Orsay (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire Interdisciplinaire de Physique Saint Martin d’Hères (LIPhy), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 ), Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), ANR-10-LABX-0035,Nano-Saclay,Paris-Saclay multidisciplinary Nano-Lab(2010), ANR-10-LABX-0039,PALM,Physics: Atoms, Light, Matter(2010) |
| المصدر: | ISSN: 2041-1723. |
| بيانات النشر: | HAL CCSD Nature Publishing Group |
| سنة النشر: | 2018 |
| المجموعة: | Université Grenoble Alpes: HAL |
| مصطلحات موضوعية: | [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] |
| الوصف: | International audience ; In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on the electro-luminescence of molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging: silicon's indirect band-gap causes an inefficient emission , and it is difficult to separate spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges and measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser doping. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresis-tance effects to a few percent. We find that electroluminescence can be enhanced by up to 300% near room temperature in a seven Tesla magnetic field, showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs. Introduction Spintronic effects in systems with weak spin-orbit coupling have attracted considerable attention due to their rich fundamental physics and potential for device applications. 1-4 A class of these effects can be measured optically, 5-7 providing direct insight into phenomena such as spin-dependent recombination, where only the singlet state of an electron-hole pair can recombine radiatively back to the ground state. Since external magnetic fields can change the spin statistics and energy levels in the sample, magneto-electroluminescence (MEL) effects have been seen as the hallmark of spin-dependent recombination phenomena, and have given important insight into the role of spin in organic materials used for light-emitting diodes (LEDs). 8-10 These spintronic effects can then be harnesseed, to provide very senstive magnetic field sensors, sensible to external magentic fields of only a few mTesla comparable with the fluctuating hyperfine fields inside ... |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| العلاقة: | hal-02399933; https://hal.science/hal-02399933Test; https://hal.science/hal-02399933/documentTest; https://hal.science/hal-02399933/file/sidiodes_arxiv.pdfTest |
| DOI: | 10.1038/s41467-017-02804-6 |
| الإتاحة: | https://doi.org/10.1038/s41467-017-02804-6Test https://hal.science/hal-02399933Test https://hal.science/hal-02399933/documentTest https://hal.science/hal-02399933/file/sidiodes_arxiv.pdfTest |
| حقوق: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.98F65C22 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1038/s41467-017-02804-6 |
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