دورية أكاديمية

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution

التفاصيل البيبلوغرافية
العنوان: Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution
المؤلفون: Haifeng Yang, Yufeng Li, Jiawei Wang, Aixing Li, Kun Li, Chuangcheng Xu, Minyan Zhang, Zhenhuan Tian, Qiang Li, Feng Yun
المصدر: Nanomaterials, Vol 13, Iss 13, p 2014 (2023)
بيانات النشر: MDPI AG
سنة النشر: 2023
المجموعة: Directory of Open Access Journals: DOAJ Articles
مصطلحات موضوعية: micro-LED, sidewall damage, spatially resolved photoluminescence, Chemistry, QD1-999
الوصف: Spatially resolved photoluminescence at the sub-micro scale was used to study the optical non-uniformity of the micro-LED under varied power density excitation levels. The trend of the efficiency along injection levels were found to be highly dependent on the location of the chip mesa. The sidewall was 80% lower than the center under low-power density excitation, but was 50% higher under high-power density excitation. The external quantum efficiency droop at the center and the sidewall was 86% and 52%, respectively. A 2 µm band area near the sidewall was characterized where the efficiency and its trends changed rapidly. Beyond such band, the full width at half maximum and peak wavelength variation across the chip varied less than 1 nm, indicating high uniformity of the material composition. The sudden change = in the band, especially under high level excitation indicates the indium composition change formed by ion residues on the sidewall affect the distribution of charge carriers. These findings contribute to the understanding of cause of efficiency disadvantage and non-uniformity problems in small-size micro-LEDs.
نوع الوثيقة: article in journal/newspaper
اللغة: English
تدمد: 2079-4991
العلاقة: https://www.mdpi.com/2079-4991/13/13/2014Test; https://doaj.org/toc/2079-4991Test; https://doaj.org/article/5ccf4339adc04840b29ce1691bc56ceaTest
DOI: 10.3390/nano13132014
الإتاحة: https://doi.org/10.3390/nano13132014Test
https://doaj.org/article/5ccf4339adc04840b29ce1691bc56ceaTest
رقم الانضمام: edsbas.8ED5672B
قاعدة البيانات: BASE
الوصف
تدمد:20794991
DOI:10.3390/nano13132014