التفاصيل البيبلوغرافية
| العنوان: |
Morphological analysis of GeTe in inline phase change switches |
| المؤلفون: |
King, Matthew R., El-Hinnawy, Nabil, Salmon, Mike, Gu, Jitty, Wagner, Brian P., Jones, Evan B., Borodulin, Pavel, Howell, Robert S., Nichols, Doyle T., Young, Robert M. |
| المساهمون: |
Defense Advanced Research Projects Agency |
| المصدر: |
Journal of Applied Physics ; volume 118, issue 9 ; ISSN 0021-8979 1089-7550 |
| بيانات النشر: |
AIP Publishing |
| سنة النشر: |
2015 |
| مصطلحات موضوعية: |
General Physics and Astronomy |
| الوصف: |
Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| DOI: |
10.1063/1.4929419 |
| DOI: |
10.1063/1.4929419/9190421/094501_1_online.pdf |
| الإتاحة: |
https://doi.org/10.1063/1.4929419Test |
| رقم الانضمام: |
edsbas.88E4A574 |
| قاعدة البيانات: |
BASE |
