دورية أكاديمية

Effects of different types of defects on ignition mechanisms in shocked β-cyclotetramethylene tetranitramine crystals: A molecular dynamics study based on ReaxFF-lg force field

التفاصيل البيبلوغرافية
العنوان: Effects of different types of defects on ignition mechanisms in shocked β-cyclotetramethylene tetranitramine crystals: A molecular dynamics study based on ReaxFF-lg force field
المؤلفون: Huang, Xiaona, Qiao, Zhiqiang, Dai, Xiaogan, Zhang, Kaili, Li, Ming, Pei, Gang, Wen, Yushi
المساهمون: National Natural Science Foundation of China
المصدر: Journal of Applied Physics ; volume 125, issue 19 ; ISSN 0021-8979 1089-7550
بيانات النشر: AIP Publishing
سنة النشر: 2019
الوصف: Microscopic defects affect shock sensitivity remarkably. We exhibit a molecular dynamics study of defective β-cyclotetramethylene tetranitramine (HMX) crystals with void (VH), entrained oxygen (OH), and entrained amorphous carbon (CH), as well as a perfect HMX crystal (PH) for contrast. The crystals were shocked with 9 km/s shock velocity perpendicular to the (010) plane for 50 ps using a ReaxFF-lg force field. The results demonstrate that the shock sensitivity of HMX crystals with different defects is enhanced to different degrees. OH has the highest shock sensitivity, which is slightly higher than that in VH; both OH and VH crystals have much higher shock sensitivity than that in CH. Obvious local high temperature areas are found in defective systems, which are not found in PH. The initial reaction is N–NO2 bond cleavage in PH and is N–NO2 and N–O bond cleavages in defective systems. More products are found in defective HMX crystals during shock simulations, while fewer immediate products and no final product are found in PH. The average temperature, pressure, and decrement of potential energy during simulation are much higher in defective systems compared to the perfect ones.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1063/1.5086916
DOI: 10.1063/1.5086916/15228546/195101_1_online.pdf
الإتاحة: https://doi.org/10.1063/1.5086916Test
رقم الانضمام: edsbas.8328793D
قاعدة البيانات: BASE