دورية أكاديمية

Nanoristors: highly uniform, sub-500-millivolt, large-scale, and robust molybdenum disulfide nanograined memristors

التفاصيل البيبلوغرافية
العنوان: Nanoristors: highly uniform, sub-500-millivolt, large-scale, and robust molybdenum disulfide nanograined memristors
المؤلفون: Woo, Gunhoo, Kim, Hyeong-U, Jang, Byung Chul, Naqi, Muhammad, Hong, Seongin, Bala, Arindam, Kang, Seunghun, Kim, Yunseok, Kim, Sunkook, Kim, Taesung, Kim, Jae-Joon, Yoo, Hocheon
المساهمون: Ministry of Trade, Industry and Energy, Ministry of Education, National Research Foundation of Korea
المصدر: Journal of Materials Chemistry C ; volume 12, issue 17, page 6350-6358 ; ISSN 2050-7526 2050-7534
بيانات النشر: Royal Society of Chemistry (RSC)
سنة النشر: 2024
الوصف: Highly robust and uniform quality memristor devices are proposed using PECVD-grown nanograin MoS 2 layers.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1039/d3tc04265k
الإتاحة: https://doi.org/10.1039/d3tc04265kTest
http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04265KTest
حقوق: http://rsc.li/journals-terms-of-useTest
رقم الانضمام: edsbas.82D2009F
قاعدة البيانات: BASE