دورية أكاديمية
Interface electronic structure in a metal/ferroelectric heterostructure under applied bias
| العنوان: | Interface electronic structure in a metal/ferroelectric heterostructure under applied bias |
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| المؤلفون: | Rault, J.E., Maroutian, T., Agnus, G., Lecoeur, Ph., Niu, G., G. Silly, M., Vilquin, B., Bendounan, A., Sirotti, F., Barrett, N. |
| المساهمون: | Service de Physique et de Chimie des Surfaces et Interfaces (SPCSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), ANR-10-BLAN-1012,Surf-FER,Modifications de la structure chimique et électronique de surfaces ferroélectriques sous adsorption de H2O(2010), ANR-07-BLAN-0312,MINOS,Monolithic INtegration of functional Oxides on Silicon for novel micro-system devices(2007) |
| المصدر: | ISSN: 1098-0121 ; EISSN: 1550-235X. |
| بيانات النشر: | HAL CCSD American Physical Society |
| سنة النشر: | 2013 |
| المجموعة: | HAL-CEA (Commissariat à l'énergie atomique et aux énergies alternatives) |
| مصطلحات موضوعية: | PACS number(s): 77.80.−e, 73.21.Ac, 73.40.−c, 77.84.−s, [PHYS]Physics [physics] |
| الوصف: | International audience ; The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure, Pt/BaTiO$_3$ /Nb-doped SrTiO$_3$ , under in-situ bias voltage is investigated using x-ray photoelectron spectroscopy. The full band alignment is measured and is supported by transport measurements. Barrier heights depend on interface chemistry and on the FE polarization. A differential response of the core levels to applied bias as a function of the polarization state is observed, consistent with Callen charge variations near the interface. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| العلاقة: | cea-01477666; https://cea.hal.science/cea-01477666Test; https://cea.hal.science/cea-01477666/documentTest; https://cea.hal.science/cea-01477666/file/PhysRevB.87.155146.pdfTest |
| DOI: | 10.1103/PhysRevB.87.155146 |
| الإتاحة: | https://doi.org/10.1103/PhysRevB.87.155146Test https://cea.hal.science/cea-01477666Test https://cea.hal.science/cea-01477666/documentTest https://cea.hal.science/cea-01477666/file/PhysRevB.87.155146.pdfTest |
| حقوق: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.7764971E |
| قاعدة البيانات: | BASE |
| DOI: | 10.1103/PhysRevB.87.155146 |
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