التفاصيل البيبلوغرافية
| العنوان: |
Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers |
| المؤلفون: |
Ito, Yoshikaze, Tamai, Seita, Hoshi, Takuya, Gotow, Takahiro, Miyamoto, Yasuyuki |
| المصدر: |
Japanese Journal of Applied Physics ; volume 62, issue SC, page SC1048 ; ISSN 0021-4922 1347-4065 |
| بيانات النشر: |
IOP Publishing |
| سنة النشر: |
2023 |
| الوصف: |
In this study, AlGaN/GaN high-electron-mobility transistors with 65 and 38 nm channel layers and back-barrier layers were fabricated. The isolation process resulted in damage related to the thickness of the channel layer, which deteriorated properties such as sheet resistance R sh and transconductance g m . These were attributed to the surface oxidation of the AlGaN barrier, and the simulation results showed that the channel layer thickness changed the dependence of R sh on the trap level density; however, the calculated changes were smaller than the observed changes. In the range of gate lengths we produced, suppression of the short-channel effect by the back barrier layer was confirmed. However, no significant change in the channel layer thickness was observed. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| DOI: |
10.35848/1347-4065/acb2d5 |
| DOI: |
10.35848/1347-4065/acb2d5/pdf |
| الإتاحة: |
https://doi.org/10.35848/1347-4065/acb2d5Test |
| حقوق: |
https://iopscience.iop.org/page/copyrightTest ; https://iopscience.iop.org/info/page/text-and-data-miningTest |
| رقم الانضمام: |
edsbas.76737797 |
| قاعدة البيانات: |
BASE |
