التفاصيل البيبلوغرافية
| العنوان: |
The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy |
| المؤلفون: |
Liu XL, Wang LS, Lu DC, Wang D, Wang XH, Lin LY, Liu XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn |
| سنة النشر: |
1998 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Movpe, Gan, Gan Buffer, Heavy Si-doping, 半导体材料, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd |
| الوصف: |
The physical properties of low-temperature-deposited GaN buffer layers with different thicknesses grown by metal-organic vapor-phase epitaxy have been studied. A tentative model for the optimum thickness of buffer layer has been proposed. Heavily Si-doped GaN layers have been grown using silane as the dopant. The electron concentration of Si-doped GaN reached 1.7 x 10(20) cm(-3) with mobility 30 cm(2)/V s at room temperature. (C) 1998 Published by Elsevier Science B.V. All rights reserved. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF CRYSTAL GROWTH; Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY .The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1998,189(0):287-290; http://ir.semi.ac.cn/handle/172111/13170Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/13170Test |
| رقم الانضمام: |
edsbas.67D67BA6 |
| قاعدة البيانات: |
BASE |
