دورية أكاديمية
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
| العنوان: | Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide |
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| المؤلفون: | Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Chanana, R.K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Holland, O.W., Das, M.K., Palmour, J.W. |
| المصدر: | IEEE Electron Device Letters ; volume 22, issue 4, page 176-178 ; ISSN 0741-3106 1558-0563 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2001 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/55.915604 |
| الإتاحة: | https://doi.org/10.1109/55.915604Test http://xplorestaging.ieee.org/ielx5/55/19783/00915604.pdf?arnumber=915604Test |
| حقوق: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.htmlTest |
| رقم الانضمام: | edsbas.6749460D |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/55.915604 |
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