التفاصيل البيبلوغرافية
| العنوان: |
Long-range fluctuations of random potential landscape as a mechanism of 1/f noise in hydrogenated amorphous silicon |
| المؤلفون: |
Fine, B. V., Bakker, J. P. R., Dijkhuis, J. I. |
| سنة النشر: |
2007 |
| المجموعة: |
ArXiv.org (Cornell University Library) |
| مصطلحات موضوعية: |
Condensed Matter - Statistical Mechanics, Condensed Matter - Disordered Systems and Neural Networks, Condensed Matter - Materials Science |
| الوصف: |
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon (a-Si:H) under the condition that current flows perpendicular to the plane of the films, and found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects. ; Comment: 14 pages, 3 figures, final version |
| نوع الوثيقة: |
text |
| اللغة: |
unknown |
| العلاقة: |
http://arxiv.org/abs/0707.4156Test; Fluctuations and Noise Letters, v. 5, pp. L443-L456 (2005) |
| الإتاحة: |
http://arxiv.org/abs/0707.4156Test |
| رقم الانضمام: |
edsbas.6537D9C0 |
| قاعدة البيانات: |
BASE |
