التفاصيل البيبلوغرافية
| العنوان: |
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy |
| المؤلفون: |
Jiang, DS, Qu, YH, Ni, HQ, Wu, DH, Xu, YQ, Niu, ZC, Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn |
| بيانات النشر: |
ELSEVIER SCIENCE BV |
| سنة النشر: |
2006 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Molecular Beam Epitaxy, 半导体物理, atomic layer deposition, atomic layer epitaxial growth, ale, mle growth, molecular layer epitaxial growth, chemical beam epitaxial growth, cbe, gas source mbe, gsmbe, metalorganic molecular beam epitaxy, mombe, ommbe, chemical vapour deposition, apcvd, chemical vapor deposition, cvd, laser cvd, laser-induced cvd, lpcvd, chemical vapour infiltration, chemical vapor infiltration, cvi, crystal growth from vapour, laser deposition, mocvd, metalorganic chemical vapour deposition, movpe, omcvd |
| الوصف: |
It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF CRYSTAL GROWTH; Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC .Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy .见：ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH,PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,FEB 2 2006,288 (1): 12-17; http://ir.semi.ac.cn/handle/172111/10040Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/10040Test |
| رقم الانضمام: |
edsbas.5F8CEDBC |
| قاعدة البيانات: |
BASE |
