التفاصيل البيبلوغرافية
| العنوان: |
Very-lowtemperature molecular beam epitaxial growth of GaP/AlAs heterostructures for Distributed Bragg Reflector applications |
| المؤلفون: |
G.W. Pickrell, H.C. Lin, K.L. Chang, K.C Hsieh, K.Y. Cheng |
| المساهمون: |
鄭克勇 |
| بيانات النشر: |
American Vacuum Society |
| سنة النشر: |
2001 |
| المجموعة: |
National Tsing Hua University Institutional Repository (NTHUR) |
| مصطلحات موضوعية: |
gallium compounds, III-V semiconductors, aluminium compounds, semiconductor heterojunctions, semiconductor epitaxial layers, molecular beam epitaxial growth, semiconductor growth, distributed Bragg reflector lasers, oxidation, reflectivity |
| الوقت: |
45 |
| الوصف: |
2030161010050 ; 電機工程學系 ; Using very-low-temperature (VLT) molecular beam epitaxy (MBE), (Ga,P)/(Al,As) heterostructures were grown for use in a distributed Bragg reflector (DBR). Through the use of VLT MBE and control of the group-V overpressure, the microstructure can be controlled resulting in either amorphous or polycrystalline material for both materials. Also, the growth rate is highly dependent on the group-V overpressure due to the high sticking coefficients of both As and P at these low growth temperatures. Using lateral oxidation, the amorphous AlAs was converted to its oxide for use in a visible wavelength DBR. Variabilities within layer thickness, especially the amorphous AlAs layers, were investigated to determine their effect on the DBR reflectivities. Different DBR designs were employed resulting in a double passband DBR which is highly reflective at wavelengths of both 550 and 1100 nm. |
| نوع الوثيقة: |
journal/newspaper |
| اللغة: |
English |
| تدمد: |
1071-1023 |
| العلاقة: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, American Vacuum Society, Volume 19, Issue 4, Jul 2001, Pages 1536- 1540; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71981Test |
| الإتاحة: |
http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/71981Test |
| رقم الانضمام: |
edsbas.5943BF60 |
| قاعدة البيانات: |
BASE |
