دورية أكاديمية

Ultrahigh Sensitivity for Thermographic Human–Machine Interface via Precious Metals Atomic Layer Deposition on V‐MXene: Computational and Experimental Exploration

التفاصيل البيبلوغرافية
العنوان: Ultrahigh Sensitivity for Thermographic Human–Machine Interface via Precious Metals Atomic Layer Deposition on V‐MXene: Computational and Experimental Exploration
المؤلفون: Mohapatra, Debananda, Kang, Hyun Jin, Lee, Sanghyuk, Son, Yeseul, Ansari, Mohd Zahid, Kang, Youngho, Lee, Jung Woo, Kim, Soo‐Hyun
المساهمون: National Research Foundation of Korea, Korea Semiconductor Research Consortium, Ministry of Trade, Industry and Energy
المصدر: Small ; ISSN 1613-6810 1613-6829
بيانات النشر: Wiley
سنة النشر: 2024
المجموعة: Wiley Online Library (Open Access Articles via Crossref)
الوصف: Global healthcare based on the Internet of Things system is rapidly transforming to measure precise physiological body parameters without visiting hospitals at remote patients and associated symptoms monitoring. 2D materials and the prevailing mood of current ever‐expanding MXene‐based sensing devices motivate to introduce first the novel iridium (Ir) precious metal incorporated vanadium (V)‐MXene via industrially favored emerging atomic layer deposition (ALD) techniques. The current work contributes a precise control and delicate balance of Ir single atomic forms or clusters on the V‐MXene to constitute a unique precious metal‐MXene embedded heterostructure (Ir‐ALD@V‐MXene) in practical real‐time sensing healthcare applications to thermography with human–machine interface for the first time. Ir‐ALD@V‐MXene delivers an ultrahigh durability and sensing performance of 2.4% °C −1 than pristine V‐MXene (0.42% °C −1 ), outperforming several conventionally used MXenes, graphene, underscoring the importance of the Ir‐ALD innovative process. Aberration‐corrected advanced ultra‐high‐resolution transmission/scanning transmission electron microscopy confirms the presence of Ir atomic clusters on well‐aligned 2D‐layered V‐MXene structure and their advanced heterostructure formation (Ir‐ALD@V‐MXene), enhanced sensing mechanism is investigated using density functional theory (DFT) computations. A rational design empowering the Ir‐ALD process on least explored V‐MXene can potentially unfold further precious metals ALD‐process developments for next‐generation wearable personal healthcare devices.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1002/smll.202402003
الإتاحة: https://doi.org/10.1002/smll.202402003Test
حقوق: http://creativecommons.org/licenses/by-nc/4.0Test/
رقم الانضمام: edsbas.5810E09D
قاعدة البيانات: BASE