مؤتمر
A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates
| العنوان: | A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates |
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| المؤلفون: | Zafar, S., Kim, Y., Narayanan, V., Cabral, C., Paruchuri, V., Doris, B., Stathis, J., Callegari, A., Chudzik, M. |
| المصدر: | 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. |
| بيانات النشر: | IEEE |
| سنة النشر: | 2006 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/vlsit.2006.1705198 |
| الإتاحة: | https://doi.org/10.1109/vlsit.2006.1705198Test http://xplorestaging.ieee.org/ielx5/11173/35986/01705198.pdf?arnumber=1705198Test |
| رقم الانضمام: | edsbas.5788CD3B |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/vlsit.2006.1705198 |
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