دورية أكاديمية

Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET

التفاصيل البيبلوغرافية
العنوان: Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
المؤلفون: Das, Amit, Rewari, Sonam, Kanaujia, Binod Kumar, Deswal, S S, Gupta, R S
المصدر: Physica Scripta ; volume 98, issue 7, page 074005 ; ISSN 0031-8949 1402-4896
بيانات النشر: IOP Publishing
سنة النشر: 2023
الوصف: This paper critically investigates the effect of doping on different device characteristics of a Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The doping of source, channel, and drain has a prominent effect on important device characteristics, which has been investigated through DC and AC analysis performed on the SILVACO TCAD simulator. A numerical computational-based simulation study has been used to investigate the modulation of various device characteristics, such as threshold voltage, cut-off frequency, subthreshold swing, MTPG, current ratio, channel resistance, and transconductance. The investigation revealed a strong dependence of most of these characteristics on the source, channel, and drain doping levels, providing valuable insights into device performance. Proper optimization in doping can significantly improve the performance of the device. A compact physics-based analytical model has been mathematically evaluated and proposed in this work, showing an excellent in-line agreement with the simulated results. This is a novel approach for improving the analog performance parameters of a nanowire MOSFET through doping optimization, which incorporates gate oxide stacking and germanium as a source material. In this work, the biosensing capability of the GSI-NWM has also been discussed and evaluated.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1088/1402-4896/acde16
DOI: 10.1088/1402-4896/acde16/pdf
الإتاحة: https://doi.org/10.1088/1402-4896/acde16Test
حقوق: https://iopscience.iop.org/page/copyrightTest ; https://iopscience.iop.org/info/page/text-and-data-miningTest
رقم الانضمام: edsbas.5269A968
قاعدة البيانات: BASE