دورية أكاديمية
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process
| العنوان: | Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process |
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| المؤلفون: | Zhang, Yongkui, Ai, Xuezheng, Yin, Xiaogen, Zhu, Huilong, Yang, H., Wang, G. L., Li, J. J., Du, A. Y., Li, C., Huang, W. X., Xie, L., Li, Y. Y., Liu, Y. B., Zhang, Y. B., Jia, K. P., Wu, Z. H., Ma, X. L., Zhang, Q. Z., Mao, S. J., Xu, G. B., Xiang, J. J., Gao, J. F., He, X. B., Lu, Y. H., Bai, G. B., Zhao, J., Li, Y. L., Yang, T., Li, J. F., Yin, H. X., Radamson, H., Luo, J., Zhao, C., Wang, W. W., Ye, T. C. |
| المساهمون: | Academy of Integrated Circuit of the Chinese Academy of Sciences, National Key Research and Development Program of China, Youth Innovation Promotion Association of CAS |
| المصدر: | IEEE Transactions on Electron Devices ; volume 68, issue 6, page 2604-2610 ; ISSN 0018-9383 1557-9646 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2021 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/ted.2021.3072879 |
| الإتاحة: | https://doi.org/10.1109/ted.2021.3072879Test http://xplorestaging.ieee.org/ielx7/16/9439211/09417199.pdf?arnumber=9417199Test |
| حقوق: | https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.htmlTest ; https://doi.org/10.15223/policy-029Test ; https://doi.org/10.15223/policy-037Test |
| رقم الانضمام: | edsbas.46573B5E |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/ted.2021.3072879 |
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