التفاصيل البيبلوغرافية
| العنوان: |
Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region |
| المؤلفون: |
Papatryfonos, Konstantinos, Angelova, Todora, Brimont, Antoine, Reid, Barry, Guldin, Stefan, Smith, Peter Raymond, Tang, Mingchu, Li, Keshuang, Seeds, Alwyn J., Liu, Huiyun, Selviah, David R. |
| المساهمون: |
H2020 Industrial Leadership |
| المصدر: |
AIP Advances ; volume 11, issue 2 ; ISSN 2158-3226 |
| بيانات النشر: |
AIP Publishing |
| سنة النشر: |
2021 |
| الوصف: |
A series of AlxGa(1−x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wavelength region below the bandgap. Particular attention is given to O-band and C-band telecommunication wavelengths around 1.3 µm and 1.55 µm, as well as at 825 nm. MBE gave a very high accuracy for grown layer thicknesses, and the alloys’ precise compositions and bandgap values were confirmed using high-resolution x-ray diffraction and photoluminescence, to improve the refractive index model fitting accuracy. This work is the first systematic study for MBE-grown AlxGa(1−x)As across a wide spectral range. In addition, we employed a very rigorous measurement-fitting procedure, which we present in detail. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| DOI: |
10.1063/5.0039631 |
| DOI: |
10.1063/5.0039631/13000732/025327_1_online.pdf |
| الإتاحة: |
https://doi.org/10.1063/5.0039631Test |
| رقم الانضمام: |
edsbas.44196CD |
| قاعدة البيانات: |
BASE |
