التفاصيل البيبلوغرافية
| العنوان: |
TOPICAL REVIEW Wide bandgap GaN-based semiconductors for spintronics |
| المؤلفون: |
S J Pearton, C R Abernathy, G T Thaler, R M Frazier, D P Norton, F Ren, Y D Park, J M Zavada, I A Buyanova, W M Chen, A F Hebard |
| المساهمون: |
The Pennsylvania State University CiteSeerX Archives |
| المصدر: |
http://www.phys.ufl.edu/~afh/reprints/WideBandGap_GaN_spintronics_Pearton.pdfTest. |
| سنة النشر: |
2004 |
| المجموعة: |
CiteSeerX |
| الوصف: |
Recent results on achieving ferromagnetism in transition-metal-doped GaN, AlN and related materials are discussed. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low-power, high speed memory, logic and photonic devices based on spintronics. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. We discuss the current state-of-the-art in producing room temperature ferromagnetism in GaN-based materials, the origins of the magnetism and its potential applications. (Some figures in this article are in colour only in the electronic version) Contents |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| العلاقة: |
http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.550.5588Test; http://www.phys.ufl.edu/~afh/reprints/WideBandGap_GaN_spintronics_Pearton.pdfTest |
| الإتاحة: |
http://www.phys.ufl.edu/~afh/reprints/WideBandGap_GaN_spintronics_Pearton.pdfTest |
| حقوق: |
Metadata may be used without restrictions as long as the oai identifier remains attached to it. |
| رقم الانضمام: |
edsbas.428BF9C6 |
| قاعدة البيانات: |
BASE |
