التفاصيل البيبلوغرافية
| العنوان: |
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers |
| المؤلفون: |
Wu, BP, Wu, DH, Xiong, YH, Huang, SS, Ni, HQ, Xu, YQ, Niu, ZC, Wu, BP, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. |
| بيانات النشر: |
AMER SCIENTIFIC PUBLISHERS |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Inas Quantum Dots, 半导体化学 |
| الوصف: |
In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
English |
| العلاقة: |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY; Wu, BP;Wu, DH;Xiong, YH;Huang, SS;Ni, HQ;Xu, YQ;Niu, ZC.Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers .见：AMER SCIENTIFIC PUBLISHERS .JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY ,25650 NORTH LEWIS WAY, STEVENSON RANCH, CA 91381-1439 USA ,39845,9 (2): 1333-1336 Sp. Iss. SI FEB; http://ir.semi.ac.cn/handle/172111/8332Test |
| الإتاحة: |
http://ir.semi.ac.cn/handle/172111/8332Test |
| رقم الانضمام: |
edsbas.3B0FC30A |
| قاعدة البيانات: |
BASE |
